Browsing by Author "Clauws, P."
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Publication A BEEM study of PtSi Schottky contacts on ion-milled Si
;Ru, Guo-Ping ;Detavernier, C. ;Alves Donaton, Ricardo ;Blondeel, A.Clauws, P.Proceedings paper1999, Advanced Interconnects and Contacts, 5/04/1999, p.201-206Publication A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon
Journal article2007, Journal of Materials Science: Materials in Electronics, (18) 7, p.705-710Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
;De Gryse, O. ;Vanhellemont, J. ;Clauws, P. ;Lebedev, O. ;Van Landuyt, J.; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017Publication A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
Journal article1997, Journal of Applied Physics, (82) 4, p.1696-1699Publication Analysis of oxygen thermal donor formation in n-type CZ silicon
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105Publication Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond
Journal article2007, Diamond and Related Materials, (16) 4_7, p.983-986Publication Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
Journal article2007, Physica B: Condensed Matter, 401-402, p.222-225Publication Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
; ;Claeys, Cor; ;De Gryse, O. ;Clauws, P. ;Job, R. ;Ulyashin, A.G.Fahrner, W.Journal article2003, Materials Science and Engineering B, (102) 1_3, p.207-212Publication Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
Journal article2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605Publication Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
;De Gryse, O. ;Clauws, P. ;Vanhellemont, J. ;Lebedev, O. ;Van Landuyt, J.; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.183-194Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Combined electrical and spectroscopic investigation of thermal donor formation in plasma-hydrigenated n-type czochralski silicon
;Rafi, Joan Marc; ;Claeys, Cor ;Ulyashin, Aliaksandr ;Huang, Y.L. ;Job, R.Lauwaert, J.Meeting abstract2004, International Scientific Meeting Belgian Physical Society. Abstracts Book, 25/06/2004, p.74Publication Deep level transient spectroacopy of transition metal impurities in germanium
;Clauws, P. ;Van Gheluwe, J. ;Lauwaert, J.; ;Vanhellemont, J.; Theuwis, A.Journal article2007, Physica B: Condensed Matter, 401-402, p.188-191Publication Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon
; ;Claeys, Cor ;Neimash, V. B. ;Kraitchinskii, A. ;Kras'ko, N. ;Puzenko, O.Blondeel, A.Journal article2000, Applied Physics Letters, (76) 20, p.2838-2840Publication Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon
; ;Rafi, Joan Marc ;Claeys, Cor ;Neimash, V. ;Kraitchinski, A. ;Kras'ko, M.Tischenko, V.Journal article2003, Japanese Journal of Applied Physics. Part 1: Regular Papers, (42) 3, p.7184-7188Publication Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526Publication Defect analysis of n-type silicon strained layers
; ; ; ; ; ;Claeys, CorHerzog, H. J.Journal article2001, Materials Science in Semiconductor Processing, 4, p.225-227Publication Defect analysis of n-type silicon strained layers
; ; ; ; ; ;Claeys, C.Herzog, H. J.Oral presentation2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced ChaPublication Determination of the oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy
;De Gryse, O. ;Clauws, P. ;Vanhellemont, JanClaeys, CorProceedings paper1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.405-410Publication DLTS and PL studies of proton radiation defects in TiN-doped FZ silicon
Journal article2002, Nuclear Instruments & Methods in Physics Research B, 186, p.19-23