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Browsing by Author "Clauws, P."

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    A BEEM study of PtSi Schottky contacts on ion-milled Si

    Ru, Guo-Ping
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    Detavernier, C.
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    Alves Donaton, Ricardo
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    Blondeel, A.
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    Clauws, P.
    Proceedings paper
    1999, Advanced Interconnects and Contacts, 5/04/1999, p.201-206
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    A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon

    Huang, J.L.
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    Simoen, Eddy  
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    Claeys, Cor
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    Rafi, J.M.
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    Clauws, P.
    Journal article
    2007, Journal of Materials Science: Materials in Electronics, (18) 7, p.705-710
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    A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon

    De Gryse, O.
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    Vanhellemont, J.
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    Clauws, P.
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    Lebedev, O.
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    Van Landuyt, J.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2003, Physica B, 340-342, p.1013-1017
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    A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching

    Goubert, L.
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    Van Meirhaeghe, R. L.
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    Clauws, P.
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    Cardon, F.
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    Van Daele, Peter  
    Journal article
    1997, Journal of Applied Physics, (82) 4, p.1696-1699
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    Analysis of oxygen thermal donor formation in n-type CZ silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Ulyashin, A.G.
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    Job, R.
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    Fahrner, W.R.
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    Versluys, J.
    Proceedings paper
    2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105
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    Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond

    Hikavyy, Andriy  
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    Clauws, P.
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    Vanbesien, K.
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    De Visschere, P.
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    Williams, Oliver
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    Daenen, M.
    Journal article
    2007, Diamond and Related Materials, (16) 4_7, p.983-986
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    Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

    Gaubas, E.
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    Vanhellemont, J.
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    Simoen, Eddy  
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    Romandic, I.
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    Geens, W.
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    Clauws, P.
    Journal article
    2007, Physica B: Condensed Matter, 401-402, p.222-225
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    Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Loo, Roger  
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    De Gryse, O.
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    Clauws, P.
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    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.
    Journal article
    2003, Materials Science and Engineering B, (102) 1_3, p.207-212
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    Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy

    De Gryse, O.
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    Clauws, P.
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    Vanhellemont, Jan
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    Lebedev, O.I.
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    Van Landuyt, J.
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    Simoen, Eddy  
    Journal article
    2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605
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    Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

    De Gryse, O.
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    Clauws, P.
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    Vanhellemont, J.
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    Lebedev, O.
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    Van Landuyt, J.
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2002, High Purity Silicon VII, 20/10/2002, p.183-194
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    Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

    De Gryse, O.
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    Clauws, P.
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    Lebedev, O.
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    Van Landuyt, J.
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    Vanhellemont, Jan
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    Claeys, C.
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    Simoen, Eddy  
    Journal article
    2001, Physica B, 308, p.294-297
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    Combined electrical and spectroscopic investigation of thermal donor formation in plasma-hydrigenated n-type czochralski silicon

    Rafi, Joan Marc
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    Simoen, Eddy  
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    Claeys, Cor
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    Ulyashin, Aliaksandr
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    Huang, Y.L.
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    Job, R.
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    Lauwaert, J.
    Meeting abstract
    2004, International Scientific Meeting Belgian Physical Society. Abstracts Book, 25/06/2004, p.74
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    Deep level transient spectroacopy of transition metal impurities in germanium

    Clauws, P.
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    Van Gheluwe, J.
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    Lauwaert, J.
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    Simoen, Eddy  
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    Vanhellemont, J.
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    Meuris, Marc  
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    Theuwis, A.
    Journal article
    2007, Physica B: Condensed Matter, 401-402, p.188-191
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    Deep levels in high-energy proton-irradiated tin-doped n-type Czochralskii silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Neimash, V. B.
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    Kraitchinskii, A.
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    Kras'ko, N.
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    Puzenko, O.
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    Blondeel, A.
    Journal article
    2000, Applied Physics Letters, (76) 20, p.2838-2840
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    Deep levels in high-temperature 1 MeV electron irradiated n-type czochralski silicon

    Simoen, Eddy  
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    Rafi, Joan Marc
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    Claeys, Cor
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    Neimash, V.
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    Kraitchinski, A.
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    Kras'ko, M.
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    Tischenko, V.
    Journal article
    2003, Japanese Journal of Applied Physics. Part 1: Regular Papers, (42) 3, p.7184-7188
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    Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

    Simoen, Eddy  
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    Claeys, Cor
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    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.R.
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    Tonelli, G.
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    De Gryse, O.
    Journal article
    2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526
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    Defect analysis of n-type silicon strained layers

    Simoen, Eddy  
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    Loo, Roger  
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    Roussel, Philippe  
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    Caymax, Matty  
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    Bender, Hugo  
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    Claeys, Cor
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    Herzog, H. J.
    Journal article
    2001, Materials Science in Semiconductor Processing, 4, p.225-227
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    Defect analysis of n-type silicon strained layers

    Simoen, Eddy  
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    Loo, Roger  
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    Roussel, Philippe  
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    Caymax, Matty  
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    Bender, Hugo  
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    Claeys, C.
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    Herzog, H. J.
    Oral presentation
    2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced Cha
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    Determination of the oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy

    De Gryse, O.
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    Clauws, P.
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    Vanhellemont, Jan
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    Claeys, Cor
    Proceedings paper
    1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.405-410
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    DLTS and PL studies of proton radiation defects in TiN-doped FZ silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Privitera, Vittorio
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    Coffa, S.
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    Kokkoris, M.
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    Kossionides, E.
    Journal article
    2002, Nuclear Instruments & Methods in Physics Research B, 186, p.19-23
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