Browsing by Author "Colombeau, B."
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Publication Current understanding and modeling of B diffusion and activation anomalies in preamporphized ultra-shallow junctions
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C3.6Publication Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.43-49Publication Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth
Journal article2005, Applied Physics Letters, (86) 10, p.101913Publication Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
Journal article2004, Applied Physics Letters, (84) 12, p.2055-2057Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology, 11/06/2013, p.T196-T197