Browsing by Author "Cowern, N.E.B."
- Results Per Page
- Sort Options
Publication Advanced front-end processes for the 45nm CMOS technology node
Oral presentation2004, E-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain EngineeringPublication B profile alteration by annealing in reactive ambients
Journal article2009, Applied Physics Letters, (94) 2, p.22104Publication Current understanding and modeling of B diffusion and activation anomalies in preamporphized ultra-shallow junctions
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C3.6Publication Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate
Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.43-49Publication Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
Journal article2004, Applied Physics Letters, (84) 12, p.2055-2057Publication Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si
Journal article2014, Applied Physics Letters, (105) 22, p.221603Publication On the activation mechanisms of sub-melt laser anneals
Meeting abstract2008, E-MRS Sprng Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication On the analysis of the activation mechanisms of sub-melt laser anneals
Journal article2008, Materials Science and Engineering B, 154-155, p.24-30Publication The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer
Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.281-286Publication The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C9.6/B9.6