Browsing by Author "Cullis, A.G."

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FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

Benedetti, Alessandro
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Norris, D.J.
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Hetherington, C.J.D.
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Cullis, A.G.
;
Robbins, D.J.
Proceedings paper
2003, Microscopy of Semiconducting Materials XIII, 31/03/2003, p.151-154
TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Norris, D.J.
;
Walther, T.
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Cullis, A.G.
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Myronov, M.
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Dobbie, A.
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Whall, T.
;
Parker, E.H.C.
Journal article
2010, Journal of Physics Conference Series, (209) 1, p.12061
TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Norris, D.J.
;
Ross, I.M.
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Cullis, A.G.
;
Walther, T.
;
Myronov, M.
;
Dobbie, A.
;
Whall, T.
Journal article
2010, Journal of Physics Conference Series, (241) 1, p.12044