Browsing by Author "Das, Jo"
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Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Publication A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Proceedings paper2010-12, IEEE International Electron Device Meeting - IEDM, 6/12/2010, p.472-472Publication A hard switching VIENNA boost converter for characterization of AlGaN/GaN/AlGaN power DHFETs
Publication A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon
Proceedings paper2010, IEEE Energy Conversion Congress and Exposition - ECCE, 12/09/2010, p.3296-3302Publication A load-pull wafer-mapper
Proceedings paper2008, IEEE MTT-S International Microwave Symposium Digest, 15/06/2008, p.113-119Publication A very compact power amplifier using GaN HEMTs in multi-layer thin-film technology
Proceedings paper2010, Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits - INMMiC, 26/04/2010, p.37-40Publication AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range
Proceedings paper2010, Optical Sensing and Detection, 12/04/2010, p.772617Publication AlGaN/GaN HEMTs on Si substrates: Can they overcome the thermal limit?
Proceedings paper2007-05, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.277-280Publication AlGaN/GaN HEMTs with backside Schottky contact
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.215Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Publication Alternative approaches to nonvolatile magnetic memory: aspects of integrated magnetic structures
Meeting abstract1998, Abstracts 3rd International Symposium on Metallic Multilayers - MML, 14/06/1998, p.109Publication Backside-illuminated GaN-on-Si Schottky photodiodes for UV radiation detection
Journal article2009-12, IEEE Electron Device Letters, (30) 12, p.1308-1310Publication Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells
Journal article1998, Electronics Letters, (34) 18, p.1754-1755Publication Conductance creep and breakdown of stressed ferromagnetic tunneljunctions
Meeting abstract2001, Abstracts 8th Joint MMM-Intermag Conference, 7/01/2001, p.386Publication Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Publication Development and Integration of a high efficiency baseline leading to 23% IBC cells
Proceedings paper2012, Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics - SiliconPV, 3/04/2012, p.638-945Publication Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology
Journal article2011, Microelectronics Reliability, (51) 9_11, p.1721-1724Publication Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Proceedings paper2009, International Conference on Solid-State Devices and Materials Conference - SSDM, 7/10/2009, p.816-817Publication Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Journal article2010, Japanese Journal of Applied Physics, (49) 4, p.04DF07