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Browsing by Author "De Gryse, O."

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    A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon

    De Gryse, O.
    ;
    Vanhellemont, J.
    ;
    Clauws, P.
    ;
    Lebedev, O.
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    Van Landuyt, J.
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2003, Physica B, 340-342, p.1013-1017
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    Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

    Simoen, Eddy  
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    Claeys, Cor
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    Loo, Roger  
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    De Gryse, O.
    ;
    Clauws, P.
    ;
    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.
    Journal article
    2003, Materials Science and Engineering B, (102) 1_3, p.207-212
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    Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy

    De Gryse, O.
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    Clauws, P.
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    Vanhellemont, Jan
    ;
    Lebedev, O.I.
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    Van Landuyt, J.
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    Simoen, Eddy  
    Journal article
    2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605
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    Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

    De Gryse, O.
    ;
    Clauws, P.
    ;
    Vanhellemont, J.
    ;
    Lebedev, O.
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    Van Landuyt, J.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2002, High Purity Silicon VII, 20/10/2002, p.183-194
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    Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

    De Gryse, O.
    ;
    Clauws, P.
    ;
    Lebedev, O.
    ;
    Van Landuyt, J.
    ;
    Vanhellemont, Jan
    ;
    Claeys, C.
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    Simoen, Eddy  
    Journal article
    2001, Physica B, 308, p.294-297
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    Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step

    Simoen, Eddy  
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    Claeys, Cor
    ;
    Job, R.
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    Ulyashin, A.G.
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    Fahrner, W.R.
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    Tonelli, G.
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    De Gryse, O.
    Journal article
    2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526
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    Determination of the oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy

    De Gryse, O.
    ;
    Clauws, P.
    ;
    Vanhellemont, Jan
    ;
    Claeys, Cor
    Proceedings paper
    1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.405-410
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    DLTS studies of high-temperature electron irradiated Cz n-Si

    Neimash, V.
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    Kras'ko, M.
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    Kraitchinskii, A.
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    Voytivych, V.
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    Tishenko, V.
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    Simoen, Eddy  
    Journal article
    2004, Physica Status Solidi A, (201) 3, p.509-516
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    Grown-in lattice defects and diffusion in czochralski-grown germanium

    Vanhellemont, J.
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    De Gryse, O.
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    Hens, S.
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    Vanmeerbeek, P.
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    Poelman, D.
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    Clauws, P.
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    Simoen, Eddy  
    Journal article
    2004, Defect and Diffusion Forum, 230-232, p.149-176
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    Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

    Simoen, Eddy  
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    Claeys, Cor
    ;
    Job, R.
    ;
    Ulyashin, A.G.
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    Fahrner, W.R.
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    De Gryse, O.
    ;
    Clauws, P.
    Journal article
    2002, Applied Physics Letters, (81) 10, p.1842-1844
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    Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

    Simoen, Eddy  
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    Loo, Roger  
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    Claeys, Cor
    ;
    De Gryse, O.
    ;
    Clauws, P.
    ;
    Van Landuyt, J.
    ;
    Lebedev, O.
    Journal article
    2002, Journal of Physics - Condensed Matter, (14) 48, p.13185-13193
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    Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

    De Gryse, O.
    ;
    Clauws, P.
    ;
    Van Landuyt, J.
    ;
    Lebedev, O.
    ;
    Claeys, Cor
    ;
    Simoen, Eddy  
    ;
    Vanhellemont, Jan
    Journal article
    2002, Journal of Applied Physics, (91) 4, p.2493-2498

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