Browsing by Author "De Gryse, O."
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Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
;De Gryse, O. ;Vanhellemont, J. ;Clauws, P. ;Lebedev, O. ;Van Landuyt, J.; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017Publication Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
; ;Claeys, Cor; ;De Gryse, O. ;Clauws, P. ;Job, R. ;Ulyashin, A.G.Fahrner, W.Journal article2003, Materials Science and Engineering B, (102) 1_3, p.207-212Publication Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
Journal article2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605Publication Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
;De Gryse, O. ;Clauws, P. ;Vanhellemont, J. ;Lebedev, O. ;Van Landuyt, J.; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.183-194Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526Publication Determination of the oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IR spectroscopy
;De Gryse, O. ;Clauws, P. ;Vanhellemont, JanClaeys, CorProceedings paper1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.405-410Publication DLTS studies of high-temperature electron irradiated Cz n-Si
Journal article2004, Physica Status Solidi A, (201) 3, p.509-516Publication Grown-in lattice defects and diffusion in czochralski-grown germanium
Journal article2004, Defect and Diffusion Forum, 230-232, p.149-176Publication Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon
Journal article2002, Applied Physics Letters, (81) 10, p.1842-1844Publication Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Journal article2002, Journal of Physics - Condensed Matter, (14) 48, p.13185-13193Publication Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques
;De Gryse, O. ;Clauws, P. ;Van Landuyt, J. ;Lebedev, O. ;Claeys, Cor; Vanhellemont, JanJournal article2002, Journal of Applied Physics, (91) 4, p.2493-2498