Browsing by Author "Degroote, Stefan"
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Publication A load-pull wafer-mapper
Proceedings paper2008, IEEE MTT-S International Microwave Symposium Digest, 15/06/2008, p.113-119Publication AlGaN-based heterostructure grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanProceedings paper2007, 7th International Conference on Nitride Semiconductors - ICNS-7, 16/09/2007Publication AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Balachander, KrishnanDegroote, StefanJournal article2008, Physica Status Solidi C, (5) 6, p.1600-1602Publication AlGaN/GaN HEMT : when MOVPE meets the device challenge
;Germain, Marianne ;Leys, Maarten ;Boeykens, Steven ;Cheng, Kai ;Degroote, StefanDerluyn, JoffProceedings paper2005, Extended Abstracts 11th European Workshop on MOVPE, 5/06/2005, p.367-372Publication AlGaN/GaN HEMT grown on 150 mm Silicon(111) Substrates
Proceedings paper2007, 12th European Workshop on Metalorganic Vapour Phase Epitaxy - EWMOVPE XII, 3/06/2007Publication AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4
;Cheng, Kai ;Leys, Maarten ;Derluyn, Joff ;Degroote, Stefan ;Xiao, DongpingLorenz, AnneJournal article2007-01, Journal of Crystal Growth, 298, p.822-825Publication AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity
Journal article2008, Japanese Journal of Applied Physics, (47) 3, p.1553-1555Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
;Srivastava, Puneet ;Das, Jo ;Visalli, Domenica ;Van Hove, MarleenDerluyn, JoffMeeting abstract2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Derluyn, Joff ;Degroote, Stefan ;Leys, Maarten ;Cheng, KaiGermain, MarianneProceedings paper2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Van Hove, Marleen ;Derluyn, Joff ;Degroote, Stefan ;Leys, MaartenCheng, KaiJournal article2009, Japanese Journal of Applied Physics, (48) 4, p.04C101Publication AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation
;Cheng, Kai ;Degroote, Stefan ;Leys, Maarten ;Medjdoub, Farid ;Derluyn, JoffSijmus, BramJournal article2011, Journal of Crystal Growth, (315) 1, p.204-207Publication An initial exploration of GaN growth on Ge-(111) substrate
;Zhang, Y. ;McAleese, C. ;Xiu, H. ;Humphreys, C.J.; ;Degroote, StefanProceedings paper2008, Microscopy of Semiconducting Materials 2007. Proceedings of the 15th Conference, 2/04/2007, p.61-64Publication ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
;Germain, Marianne ;Leys, Maarten ;Degroote, Stefan ;Cheng, Kai ;Boeykens, StevenDerluyn, JoffOral presentation2005, ESA-CTB Round Table on Wide Bandgap Technologies for Microwave ApplicationPublication Cheap virtual germanium substrates by CSVT deposition on porous silicon
Proceedings paper2005, Conference Record of the 31st IEEE Photovoltaics Specialist Conference, 3/01/2005, p.579-582Publication Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Proceedings paper2005, GaN, AlN, InN and Their Alloys, 28/11/2004, p.E8.20Publication Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Oral presentation2010, International Workshop on Nitride Semiconductors - IWNPublication Controlled III/V nanowire growth by selective-area vapor-phase epitaxy
Journal article2009, Journal of the Electrochemical Society, (156) 11, p.H860-H868Publication Controlled III/V nanowire growth by selective-area vapour phase epitaxy
Proceedings paper2009, Graphene and Emerging Materials for Post-CMOS Applications, 24/05/2009, p.309-329Publication Controlled, selective III, V nanowire heteroepitaxy
Meeting abstract2009, 215th ECS Meeting, 24/05/2009, p.1332Publication Crack-free GaN Grown on Si(111) by MOVPE by introducing Step-Graded AlGaN Buffer Layers
;Cheng, Kai ;Leys, Maarten ;Degroote, Stefan ;Boeykens, Steven ;Derluyn, JoffGermain, MarianneOral presentation2005, 11th European Workshop on MOVPE