Browsing by Author "Delmotte, Joris"

Advances in metrology for complex epitaxial systems embedded in small volums

Cesium/xenon dual beam sputtering in a Cameca instrument

Composition measurements of thin films beyond the spatial resolution of SIMS

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospects of strained SiGe tunneling field-effect transistors

Depth resolution and surface transients in crystalline Silicon at ultra low energies

Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Dopant profiliing in textured structures for photovoltaic applications

GeSn channel nMOSFETs: material potential and technological outlook

MBE growth investigations of InxGa1-xAs/GaAsySb1-y systems for TFET performance prediction

Probing ultra thin Si passivation layers on Ge-substrates

Quantification of group IV alloys in confined structures: the self focusing SIMS approach

Record low contact resistivity to n-type Ge for CMOS and memory applications

Si passivation for Ge pMOSFETs: impact of Si cap growth conditions

Sims depth profiling with sub-nm resolution (?)

Simulation of the anneal of ion implanted boron emitter and the impact on the saturation current density

Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl3 diffusion or ion implantation and annealing

Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells