Browsing by Author "Fahrner, W.R."
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Publication A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high voltage applications
Proceedings paper2002, Proceedings of the 11th International Workshop on Physics of Semiconductor Devices, 11/12/2001, p.405-413Publication Analysis of oxygen thermal donor formation in n-type CZ silicon
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.96-105Publication Deep levels in oxygenated n-type high-resistivity FZ silicon before and after a low-temperature hydrogenation step
Journal article2003, Journal of the Electrochemical Society, (150) 9, p.G520-G526Publication DLTS study on deep levels formed in plasma hydrogenated and subsequently annealed silicon
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.547-552Publication Doping of oxidized float zone silicon by thermal donors- a low thermal budget doping method for device applications?
Proceedings paper2002, Defect- and Impurity-Engineered Semiconductors and Devices III, 1/04/2002, p.F9.5Publication Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon
Journal article2002, Applied Physics Letters, (81) 10, p.1842-1844Publication Hydrogen-induced thermal donor formation in n-type oxygenated high-resistivity FZ silicon
Proceedings paper2002, Proceedings of the 5th Annual Workshop on Semiconductor Advances for Future Electronics - SAFE, 26/11/2002, p.91-98Publication Hydrogen-plasma-enhanced thermal donor formation in n-type high-ressitivity MCZ silicon
Proceedings paper2005, Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV, 16/09/2005, p.165-175Publication Low temperature doping of silicon by hydrogen plasma treatments
Proceedings paper2002, High Purity Silicon VII, 20/10/2002, p.141-154Publication Modification of the effective minority carrier lifetime of silicon substrates by heat treatment and/or hydrogenation
; Abrosimov, N.Oral presentation2003, 10th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology - GADESTPublication P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon
; Publication The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon
Journal article2005, Journal of Applied Physics, (98) 3, p.033511-1-033511-4