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Browsing by Author "Faraone, Lorenzo"

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    A 5 V-Compatible Flash EEPROM Cell with Microsecond Programming Time for Embedded Memory Applications

    Van Houdt, Jan  
    ;
    Wellekens, Dirk  
    ;
    Faraone, Lorenzo
    ;
    Haspeslagh, Luc  
    ;
    Deferm, Ludo  
    Journal article
    1994, IEEE Trans. Components, Packaging, and Manufacturing Techn. Part A, (17) 3, p.380-389
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    Write/erase degradation and disturb effects in source-side injection Flash EEPROM devices

    Wellekens, Dirk  
    ;
    Van Houdt, Jan  
    ;
    Faraone, Lorenzo
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    Proceedings paper
    1994, Proceedings of the 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF, 4/10/1994, p.147-153
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    Write/erase degradation and disturb effects in source-side injection flash EEPROM devices

    Wellekens, Dirk  
    ;
    Van Houdt, Jan  
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    ;
    Faraone, Lorenzo
    Journal article
    1995, Quality and Reliability Engineering International, (11) 4, p.239-246
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    Write/erase degradation in source side injection flash EEPROMs: characterization techniques and wearout mechanisms

    Wellekens, Dirk  
    ;
    Van Houdt, Jan  
    ;
    Faraone, Lorenzo
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    Journal article
    1995, IEEE Trans. Electron Devices, (42) 11, p.1992-1998

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