Browsing by Author "Favero, D."
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Publication High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
Proceedings paper2023, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023Publication Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
Journal article2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 114620Publication Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs
; ; ; Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022