Browsing by Author "Fischetti, Massimo"

Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics

Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2

Electron mobility calculations for Si, Ge and III-V inversion layers with HfO2

Field induced quantum confinement in indirect semiconductors: quantum mechanical and modified semiclassical model

Figure of merit for and identification of sub-60 mV/decade devices

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach

Hole mobility in Ge and GaAs p-channel inversion layers with low-k insulator

Impact of field-induced quantum confinement in tunneling field-effect

Inter-ribbon tunneling in graphene: an atomistic Bardeen approach

Modeling of phonon-assisted Zener tunneling in indirect semiconductors

Modeling the capacitance-voltage response of In0.53Ga0.47As MOS structures : charge quantization and nonparabolic corrections

Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation

Overlaps in stacked graphene flakes using empirical pseudopotentials

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

Si-based tunnel field-effect transistors for low-power nano-electronics

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators

Tunnel field-effect transistors for low-power nano-electronics

Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors