Browsing by Author "Flandre, D."
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Publication Edge effects and tilt dependency of heavy ion SEE characterization in pn junctions
Publication FinFET analogue characterization from DC to 110 GHz
Journal article2005, Solid-State Electronics, (49) 5, p.1488-1496Publication Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Journal article2011, Solid-State Electronics, (59) 1, p.18-24Publication High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs
; ; Publication In-depth investigation of 0.13 μm SOI MOSFETs for high-temperature applications
Proceedings paper2004, Proceedings Ultimate Integration of Silicon (ULIS) Workshop, 11/03/2004, p.163-166Publication Influence of device engineering on the analog and RF performances of SOI MOSFETs
Publication Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFET's
Proceedings paper2002, IEEE International SOI Conference, 7/10/2002, p.161-162Publication Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface
Journal article2015, AIP Advances, (5) 10, p.107101Publication Investigation of charge control related performances in double-gate SOI MOSFETs
Proceedings paper2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.225-230Publication On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs
Journal article2007, IEEE Electron Device Letters, (28) 10, p.919-921Publication The length-dependence of the 1/f noise of graded-channel SOI nMOSFETs
Proceedings paper2007, Microelectonics Technology and Devices SBMICRO 2007, 3/09/2007, p.373-381Publication The low-frequency noise behaviour of graded-channel SOI nMOSFETs
Journal article2007, Solid-State Electronics, (51) 2, p.260-267Publication Total-dose effects caused by high-energy neutrons and gamma-rays in multiple-gate FETs
Journal article2010, IEEE Transactions on Nuclear Science, (57) 4, p.1764-1770Publication Total-dose effects caused by high-energy neutrons and g-rays in multiple-gate FETs
Proceedings paper2009, 10th European Conference on Radiation and Its Effects on Components and Systems - RADECS, 14/09/2009Publication Ultrathin CIGS solar cells with passivated and highly reflective back contacts - results from the ARCIGS-M consortium
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