Browsing by Author "Galloway, K.F."
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Publication Laser- and heavy ion-induced charge collection in bulk FinFETs
;El-Mamouni, F. ;Zhang, E.X. ;Pate, N.D. ;Schrimpf, R.D. ;Reed, R.A. ;Galloway, K.F.McMorrow, D.Journal article2011, IEEE Transactions on Nuclear Science, (58) 6,1, p.2563Publication Laser-induced current transients in bulk FinFETs
;El-Mamouni, F. ;Zhang, E.X. ;Hooten, N. ;Schrimpf, R.D. ;Reed, R. ;Galloway, K.F.McMarrow, D.Meeting abstract2011, Nuclear and Space Radiation Engineering Conference - NSREC, 25/07/2011Publication Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.882-885Publication Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Oral presentation2008, 8th International Workshop on Radiation Effects on Semiconductor Devices for Space ApplicationsPublication Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio
Proceedings paper2008, 8th European Workshop on Radiation Effects on Components and Systems - RADECS, 10/09/2008, p.59-63Publication Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
;Wang, L. ;Zhang, E.X. ;Zhang, C.X. ;Duan, G.X. ;Schrimpf, R.D. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25Publication Total ionizing dose effects on Ge pMOSFETs with high-k gate stack: on/off current ratio
Journal article2009, IEEE Transactions on Nuclear Science, (56) 4, p.1926-1930