Browsing by Author "Garfunkel, E."

Now showing 1 - 3 of 3

Gate oxide atomic layer deposition studied by in situ infrared spectroscopy

Frank, M.M.
;
Dörmann, S.
;
Chabal, Y.J.
;
Sayan, S.
;
Garfunkel, E.
;
Wilk, G.D.
;
Green, M.L.
Oral presentation
2003, E-MRS Spring Meeting Symposium I Functional Metal Oxides - Semiconductor Structures
Improved film growth and flatband voltage control of ALD HfO2 and Hf-Al-O with n+ poly-si gates using chemical oxides and optimized post-annealing

Wilk, G. D.
;
Green, Martin
;
M.-Y., Ho
;
Busch, B. W.
;
Sorsch, T. W.
;
Klemens, F. P.
;
Brijs, Bert
Proceedings paper
2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.88-9
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Tsai, Wilman
;
Carter, Richard
;
Nohira, Hiroshi
;
Caymax, Matty
;
Conard, Thierry
;
Cosnier, Vincent
Journal article
2003, Microelectronic Engineering, (65) 3, p.259-272