Browsing by Author "Goes, W."

A rigorous study of measurement techniques for negative bias temperature instability

Characterization and modeling of charge trapping: From single defects to devices

Critical modeling issues in negative bias temperature instability

Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks

Direct tunneling and gate current fluctuations

Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI

On the impact of mechanical stress on gate oxide trapping

Physical modeling of NBTI: from individual defects to devices

The "permanent" component of NBTI revisited: saturation, degradation-reversal, and annealing

Understanding correlated drain and gate current fluctuations

Understanding negative bias temperature instability in the context of hole trapping