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Browsing by Author "Harada, Yoshinao"

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    Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

    Shickova, Adelina
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    Kauerauf, Thomas
    ;
    Rothschild, Aude
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    Aoulaiche, Marc
    ;
    Sahhaf, Sahar  
    Proceedings paper
    2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159
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    Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application

    Niwa, Masaaki
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    Mitsuhashi, Riichirou
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    Yamamoto, K.
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    Hayashi, S.
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    Harada, Yoshinao
    Proceedings paper
    2005-10, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 13/09/2005, p.6-7
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    Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

    O'Sullivan, Barry  
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    Mitsuhashi, Riichirou
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    Pourtois, Geoffrey  
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    Aoulaiche, Marc
    ;
    Houssa, Michel  
    Journal article
    2008, Journal of Applied Physics, (104) 4, p.44500

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