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Browsing by Author "Jacobs, Koen"

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    Accelerated aging of InGaN/GaN LED by electrical stressing

    Jacobs, Koen
    ;
    Cheyns, Jan
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Harrison, I.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120
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    Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

    Trager-Cowan, C.
    ;
    Osborne, I.
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    Barisonzi, M.
    ;
    Manson-Smith, S. K.
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    O'Donnell, K. P.
    ;
    Jacobs, Koen
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.347-350
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    Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer

    Trager-Cowan, C.
    ;
    Mohammed, A.
    ;
    Manson-Smith, S. K.
    ;
    O'Donnell, K. P.
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    Oral presentation
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3
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    Characterisation of epitaxial laterally overgrown Gallium Nitride using transmission electron microscopy

    Tricker, D. M.
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    Jacobs, Koen
    ;
    Humphreys, C. J.
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.633-637
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    Chemical mapping of InGaN MQWs

    Sharma, N.
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    Tricker, D.
    ;
    Thomas, P.
    ;
    Bougrioua, Zahia
    ;
    Jacobs, Koen
    ;
    Cheyns, Jan
    ;
    Moerman, Ingrid  
    Journal article
    2001, Journal of Crystal Growth, (230) 3_4, p.438-441
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    Chemical mapping of V-defects in InGaN MQWs

    Sharma, N.
    ;
    Tricker, D. M.
    ;
    Thomas, P. J.
    ;
    Humphreys, C. J.
    ;
    Bougrioua, Zahia
    ;
    Jacobs, Koen
    Oral presentation
    2000, 4th European GaN Workshop - EGW-4
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    Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN

    Karouta, F.
    ;
    Jacobs, B.
    ;
    Kramer, M. C. J. C. M.
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    Jacobs, Koen
    ;
    Moerman, Ingrid  
    Oral presentation
    1999, Semiconductor and Integrated Optoelectronics - SIOE
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    ;
    White, M. E.
    Journal article
    2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38
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    Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    ;
    White, M. E.
    Proceedings paper
    2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1
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    Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

    Chen, W.M.
    ;
    McNally, P.J.
    ;
    Jacobs, Koen
    ;
    Tuomi, T.
    ;
    Danilewsky, A.N.
    ;
    Zytkiewicz, Z.R.
    ;
    Lowney, D.
    Journal article
    2002, Journal of Crystal Growth, (243) 1, p.94-102
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    Development of GaN-materials for optoelectronic applications

    Cheyns, Jan
    ;
    Jacobs, Koen
    ;
    Bougrioua, Zahia
    ;
    Moerman, Ingrid  
    Oral presentation
    2000, 1st Doctoraatssymposium FTW
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    Direct determination of the composition and elastic strain in InGaN and AlGaN layers

    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Yao, S.
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    ;
    Li, J.
    Meeting abstract
    1999, MRS Fall Meeting Symposium W: GaN and Related Alloys, 29/11/1999, p.W3.53
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    Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

    Nistor, Leona
    ;
    Bender, Hugo  
    ;
    Vantomme, Andre  
    ;
    Wu, Ming Fang
    ;
    Van Landuyt, J.
    ;
    O'Donnell, K. P.
    Journal article
    2000, Applied Physics Letters, (77) 4, p.507-509
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    Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

    Jacobs, Koen
    ;
    Leys, Maarten
    ;
    Moerman, Ingrid  
    Meeting abstract
    2002, 11th International Conference on Metalorganic Vapor Phase Epitaxy - MOVPE, 3/06/2002, p.157
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    Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

    Duxbury, N.
    ;
    Dawson, P.
    ;
    Bangert, U.
    ;
    Thrush, E. J.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.355-359
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    Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

    Duxbury, N.
    ;
    Dawson, P.
    ;
    Bangert, U.
    ;
    Thrush, E. J.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130
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    Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study

    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Hogg, S. M.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    1999, Appl. Phys. Lett., (74) 3, p.365-367
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
    ;
    Yao, S.
    ;
    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Oral presentation
    1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2000, Materials Science and Engineering B, (75) 2_3, p.232-235
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    Electron energy loss studies at dislocations in GaN

    Shang, P.
    ;
    Bangert, U.
    ;
    Harvey, A. J.
    ;
    Duxbury, N.
    ;
    Jacobs, Koen
    Proceedings paper
    1999, Electron Microscopy and Analysis 1999; Sheffield, UK. August 1999., p.323-326
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