Browsing by Author "Jacobs, Koen"
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Publication Accelerated aging of InGaN/GaN LED by electrical stressing
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120Publication Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer
;Trager-Cowan, C. ;Osborne, I. ;Barisonzi, M. ;Manson-Smith, S. K. ;O'Donnell, K. P.Jacobs, KoenJournal article1999, Physica Status Solidi B, (216) 1, p.347-350Publication Cathodoluminescence from InGaN/GaN MQW grown on an epitaxially lateral overgrown GaN epilayer
;Trager-Cowan, C. ;Mohammed, A. ;Manson-Smith, S. K. ;O'Donnell, K. P. ;Jacobs, KoenOral presentation1999, 3rd International Conference on Nitride Semiconductors - ICNS3Publication Characterisation of epitaxial laterally overgrown Gallium Nitride using transmission electron microscopy
;Tricker, D. M. ;Jacobs, KoenHumphreys, C. J.Journal article1999, Physica Status Solidi B, (216) 1, p.633-637Publication Chemical mapping of InGaN MQWs
Journal article2001, Journal of Crystal Growth, (230) 3_4, p.438-441Publication Chemical mapping of V-defects in InGaN MQWs
;Sharma, N. ;Tricker, D. M. ;Thomas, P. J. ;Humphreys, C. J. ;Bougrioua, ZahiaJacobs, KoenOral presentation2000, 4th European GaN Workshop - EGW-4Publication Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Oral presentation1999, Semiconductor and Integrated Optoelectronics - SIOEPublication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Jacobs, Koen; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Jacobs, Koen; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Determination of crystal misorientation in epitaxial lateral overgrowth of GaN
;Chen, W.M. ;McNally, P.J. ;Jacobs, Koen ;Tuomi, T. ;Danilewsky, A.N. ;Zytkiewicz, Z.R.Lowney, D.Journal article2002, Journal of Crystal Growth, (243) 1, p.94-102Publication Development of GaN-materials for optoelectronic applications
Oral presentation2000, 1st Doctoraatssymposium FTWPublication Direct determination of the composition and elastic strain in InGaN and AlGaN layers
; ;Wu, Ming Fang ;Hogg, S. ;Langouche, G. ;Yao, S. ;Jacobs, Koen; Li, J.Meeting abstract1999, MRS Fall Meeting Symposium W: GaN and Related Alloys, 29/11/1999, p.W3.53Publication Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Journal article2000, Applied Physics Letters, (77) 4, p.507-509Publication Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures
Meeting abstract2002, 11th International Conference on Metalorganic Vapor Phase Epitaxy - MOVPE, 3/06/2002, p.157Publication Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenJournal article1999, Physica Status Solidi B, (216) 1, p.355-359Publication Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenMeeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130Publication Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Journal article1999, Appl. Phys. Lett., (74) 3, p.365-367Publication Elastic strain in InGaN and AlGaN layers
;Wu, Ming Fang ;Yao, S.; ;Hogg, S. ;Langouche, G. ;Van der Stricht, WimJacobs, KoenOral presentation1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.Publication Elastic strain in InGaN and AlGaN layers
Journal article2000, Materials Science and Engineering B, (75) 2_3, p.232-235Publication Electron energy loss studies at dislocations in GaN
;Shang, P. ;Bangert, U. ;Harvey, A. J. ;Duxbury, N.Jacobs, KoenProceedings paper1999, Electron Microscopy and Analysis 1999; Sheffield, UK. August 1999., p.323-326