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Browsing by Author "Jakschik, Stefan"

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    Improved thermal stability of Ni-silicides on Si:C epitaxial layers

    Machkaoutsan, Vladimir  
    ;
    Mertens, Sofie  
    ;
    Bauer, R.
    ;
    Lauwers, Anne  
    ;
    Verheyden, Kurt
    Journal article
    2007, Microelectronic Engineering, 84, p.2542-2546
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    Ni(Pt)Si thermal stability improvement by carbon implantation

    Mertens, Sofie  
    ;
    Hoffmann, Thomas Y.
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    Vrancken, Christa  
    ;
    Jakschik, Stefan
    ;
    Richard, Olivier  
    Proceedings paper
    2008, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 4: New Materials, Processes, and Equipment, 18/05/2008, p.397-404
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    Selective epitaxial Si/SiGe growth for VT shift adjustment in high k pMOS devices

    Loo, Roger  
    ;
    Sorada, Haruyuki
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    Inoue, Akira
    ;
    Lee, B.C
    ;
    Hyun, Sangjin
    ;
    Jakschik, Stefan
    Journal article
    2007, Semiconductor Science and Technology, (22) 1, p.S110-S113
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    The impact of stacked cap layers on effective work function with HfSiON and SiON gate dielectrics

    Cho, Hag-Ju
    ;
    Yu, Hong Yu
    ;
    Chang, Vincent S.
    ;
    Akheyar, Amal
    ;
    Jakschik, Stefan
    ;
    Conard, Thierry  
    Journal article
    2008-07, IEEE Electron Device Letters, (29) 7, p.743-745

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