Browsing by Author "Jiang, Yu-Long"
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Publication Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.550-552Publication Lanthanum and lanthanum silicide contacts on N-Type silicon
Journal article2017, IEEE Electron Device Letters, (38) 7, p.843-846Publication Oxygen gettering cap to scavenge parasitic oxide interlayer in TiSi contacts
Journal article2019-11, IEEE Electron Device Letters, (40) 11, p.1712-1715Publication Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.214-215Publication TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Journal article2011, Electrochemical and Solid-State Letters, (14) 5, p.G27-G30Publication TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
Journal article2017, IEEE Transactions on Electron Devices, (64) 2, p.500-506