Browsing by Author "Jones, S. K."
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Publication A simulation evaluation of 100 nm CMOS device performance
; Skotnicki, T.Proceedings paper2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD, 5/09/2001, p.288-291Publication Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
Publication An Advanced Calibration Method for Modelling Oxidation and Mechanical Stress in Sub-Micron CMOS Isolation Structures
Proceedings paper1994, International Electron Devices Meeting (IEDM). Technical Digest, 11/12/1994, p.877-880Publication Characterisation of mechanical stress in advanced PBL isolation
Proceedings paper1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.255-258Publication Characterisation of mechanical stresses of device isolation structures by micro-Raman spectroscopy and modelling
; Publication Device modeling in the frame of project ADEQUAT
; McCarthy, K.Journal article1996, Microelectronic Engineering, 34, p.67-84Publication Optimization of polysilicon encapsulated local oxidation of silicon
Journal article1998, Journal of the Electrochemical Society, (145) 5, p.1653-1659Publication Optimization of polysilicon encapsulated LOCOS for 0.25 micron CMOS: correlation between cavity dimensions, mechanical stress, and gate oxide integrity
Proceedings paper1997, ULSI Science and Technology 1997, 5/05/1997, p.467-477Publication Simulation of 0.18 micron CMOS device performance
Publication Simulation of advanced-LOCOS capability for sub-0.25 micron CMOS isolation
Publication Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
Journal article1996, Journal of Applied Physics, (79) 9, p.7148-7156