Browsing by Author "Karner, Markus"
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Publication 3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Proceedings paper2019, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 4/09/2019Publication A model for switching traps in amorphous oxides
Proceedings paper2009, International Conference on Simulation of Semiconductor processes and Devices - SISPAD, 9/09/2009, p.159-162Publication A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Journal article2024, MICROMACHINES, (15) 7, p.Art. 829Publication Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 1, p.554-559Publication On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment
Publication Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM, 7/12/2019, p.755-758Publication Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
Proceedings paper2015, International Electron Devices Meeting - IEDM, 7/12/2015, p.121-124