Browsing by Author "Kim, Daeyong"
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Publication 1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Proceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.592-595Publication A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Publication Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²
Journal article2016, IEEE Transactions on Electron Devices, (63) 12, p.4632-4641Publication Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation
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