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Browsing by Author "Knobloch, T."

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    COMPHY - A compact-physics framework for unified modeling of BTI

    Rzepa, Gerhard
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    Franco, Jacopo  
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    O'Sullivan, Barry  
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    Subirats, Alexandre
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    Simicic, Marko  
    Journal article
    2018, Microelectronics Reliability, 85, p.49-65
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    Efficient physical defect model applied to PBTI in high-k stacks

    Rzepa, G.
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    Franco, Jacopo  
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    Subirats, Alexandre
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    Jech, M.
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    Vaisman Chasin, Adrian  
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    Grill, A.
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-11.1-XT-11.6
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    Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS

    Michl, J.
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    Grill, Alexander  
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    Stampfer, B.
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    Waldhoer, D.
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    Schleich, C.
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    Knobloch, T.
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    Ioannidis, E.
    Proceedings paper
    2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021
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    Gate oxide reliability: upcoming trends, challenges, and opportunities

    Kaczer, Ben  
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    Degraeve, Robin  
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    Franco, Jacopo  
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    Grasser, T.
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    Roussel, Philippe  
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    Bury, Erik  
    Proceedings paper
    2024, IEEE Silicon Nanoelectronics Workshop (SNW) / Symposium on VLSI Technology and Circuits, 2024-06-15, p.3-4
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    Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

    Illarionov, Yu. Yu.
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    Karl, A.
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    Smets, Quentin  
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    Kaczer, Ben  
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    Knobloch, T.
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    Panarella, Luca  
    Journal article
    2024-FEB 2, NPJ 2D MATERIALS AND APPLICATIONS, (8) 1, p.8

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