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Browsing by Author "Kostermans, Maarten"

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    Dependence of etching rate on aspect ratio for high aspect TSV etching

    Taichi, Nishio
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    Aoi, Nobuo
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    Sasago, Masaru
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    Kubota, Masafumi
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    Kostermans, Maarten
    Proceedings paper
    2010, JSAP the 71st Autumn Meeting, 14/09/2010, p.116
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    Exploring high aspEct ratio 2μm TSV (25:1)

    Kostermans, Maarten
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    Brouri, Mohand
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    Baier, Ulrich
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    Vertommen, Johan  
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    Pageau, Arnaud
    Proceedings paper
    2011-11, 64th Annual Gaseous Electronics Conference - GEC, 14/11/2011
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    Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performance

    Mercha, Abdelkarim  
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    Redolfi, Augusto  
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    Stucchi, Michele  
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    Minas, Nikolaos
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    Van Olmen, Jan  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.109-110
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    Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers

    Redolfi, Augusto  
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    Velenis, Dimitrios  
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    Thangaraju, Sarasvathi
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    Nolmans, Philip  
    Proceedings paper
    2011-06, IEEE 61st Electronic Components and Technology Conference - ECTC, 31/05/2011, p.1384-1388
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    Novel dual layer floating gate structure as enabler of fully planar flash memory

    Blomme, Pieter  
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    Rosmeulen, Maarten  
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    Cacciato, Antonio
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    Kostermans, Maarten
    ;
    Vrancken, Christa  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.129-130
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    Through-silicon via technology for three-dimensional integrated circuit manufacturing

    Civale, Yann
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    Redolfi, Augusto  
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    Jaenen, Patrick  
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    Kostermans, Maarten
    ;
    Van Besien, Els  
    Proceedings paper
    2012, 35th International Electronics Manufacturing Technology Conference - IEMT, 6/11/2012

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