Browsing by Author "L'abbe, Caroline"
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Publication Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Meeting abstract2014-10, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6, 5/10/2014, p.1855Publication Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Proceedings paper2014-10, SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices, 5/10/2014, p.977-987Publication Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy
; ;Cheng, Kai ;Zhang, Liyang ;Leys, Maarten ;Sijmus, Bram ;L'abbe, CarolineOral presentation2011, MRS Fall Meeting Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating EnergyPublication Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment
; ;Carlson, Eric; ;Borniquel, Jose ;Kang, SangWang ;Jun, SungwonMeeting abstract2012, International Workshop on Nitride Semiconductors - IWN, 14/10/2012