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Browsing by Author "L'abbe, Caroline"

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    Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs

    Rosseel, Erik  
    ;
    Profijt, Harald
    ;
    Hikavyy, Andriy  
    ;
    Tolle, John
    ;
    Kubicek, Stefan  
    ;
    Mannaert, Geert  
    Meeting abstract
    2014-10, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6, 5/10/2014, p.1855
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    Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

    Rosseel, Erik  
    ;
    Profijt, Harald
    ;
    Hikavyy, Andriy  
    ;
    Tolle, John
    ;
    Kubicek, Stefan  
    ;
    Mannaert, Geert  
    Proceedings paper
    2014-10, SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices, 5/10/2014, p.977-987
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    Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy

    Liang, Hu  
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    Cheng, Kai
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    Zhang, Liyang
    ;
    Leys, Maarten
    ;
    Sijmus, Bram
    ;
    L'abbe, Caroline
    ;
    Dekoster, Johan  
    Oral presentation
    2011, MRS Fall Meeting Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating Energy
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    Reduction of threading dislocation density in GaN grown on 200 mm Si (111) substrate with in-situ Si2H6 inter-treatment

    Liang, Hu  
    ;
    Carlson, Eric
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    Zhao, Ming  
    ;
    Borniquel, Jose
    ;
    Kang, SangWang
    ;
    Jun, Sungwon
    ;
    Rosseel, Erik  
    Meeting abstract
    2012, International Workshop on Nitride Semiconductors - IWN, 14/10/2012

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