Browsing by Author "Lenk, S."
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Publication Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
Journal article2007-01, Applied Physics Letters, (90) 3, p.32108Publication Formation of ternary Ni-silicide on relaxed and strained SiGe layers
Journal article2004, Microelectronic Engineering, (76) 1_4, p.285-289Publication Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
; Oral presentation2004, 14th International Conference on Ion Beam Modification of Materials - IBMMPublication Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing