Browsing by Author "Lerch, W."

Now showing 1 - 4 of 4

Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing

Möller, T.
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Obermeier, G.
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Bearda, Twan
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Huber, A.
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Schmolke, R.
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von Ammon, W.
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Lerch, W.
Proceedings paper
2001, GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;, p.127-132
Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions

Faifer, V.N.
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Schroder, D.K.
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Current, M.I.
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Clarysse, Trudo
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Timans, P.J.
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Zangerle, T.
Proceedings paper
2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling, 6/05/2007, p.272-279
Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

Faifer, V.N.
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Schroder, D.K.
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Current, M.I.
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Clarysse, Trudo
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Timans, P.J.
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Zangerle, T.
Journal article
2007-09, Journal of Vacuum Science and Technology B, (25) 5, p.1588-1592
Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology

Faifer, V.N.
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Schroder, D.K.
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Current, M.I.
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Clarysse, Trudo
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Timans, P.J.
;
Zangerle, T.
Proceedings paper
2007, Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (NIST), 27/03/2007, p.246-250