Browsing by Author "Leroux, P."
- Results Per Page
- Sort Options
Publication A 1.3dB NF CMOS LNA for GPS with 3kV HBM ESD-protection
Proceedings paper2002-09, Proceedings European Solid-State Circuit Conference - ESSCIRC, 23/09/2002, p.335-338Publication A 1.6dB NF CMOS LNA for GPS with 3kV HBM ESD-protection
Proceedings paper2002, Proceedings 24th EOS/ESD Symposium, 6/10/2002, p.18-25Publication Co-design methodology to provide high esd protection levels in the advanced rf circuits
; ; ; Leroux, P.Proceedings paper2003-09, Proceedings EOS/ESD Symposium, 21/09/2003, p.195-203Publication Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe:C NPN HBT technology
Proceedings paper2008, 8th European Workshop on Radiation Effects on Components and Systems - RADECS, 10/09/2008, p.426-431Publication Effect of rotation, gate-dielectric and SEG on the noise
; ; Claeys, CorProceedings paper2009, 5th EUROSOI Workshop, 19/01/2009, p.123-124Publication Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
; Publication Geometry and strain dependence of the proton radiation behavior of MuGFET devices
Journal article2007, IEEE Trans. Nuclear Science, (54) 6, p.2227-2232Publication High ESD performance, low power CMOS LNS for GPS applications
Publication In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
Proceedings paper2007, Workshop on Semiconductor Advances for Future Electronics and Sensors - SAFE, 29/11/2007, p.452-456Publication Low-frequency noise analysis of g-irradiated p-channel bulk MuGFETs
Proceedings paper2010, 11th International Conference on Ultimate Integration on Silicon - ULIS, 18/03/2010, p.25-28Publication Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Oral presentation2008, 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications