Browsing by Author "Lo, G.Q."

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Practical solutions to enhance EWF tunability of Ni FUSI gate electrode on HfO2

Wang, X.P.
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Yang, J.J.
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Chen, J.D.
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Xie, R.L.
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Li, M.-F.
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Zhu, C.X.
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Yu, HongYu
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Du, A.Y.
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Lim, P.C.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.854-855
Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

Wang, X.P.
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Yu, HongYu
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Li, M.F
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Zhu, C.X.
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Biesemans, Serge
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Chin, A.
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Sun, Y.
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Feng, Y.
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Lim, A.
Journal article
2007-04, IEEE Electron Device Letters, (28) 4, p.258-260
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Wang, X.P.
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Li, M.F.
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Yu, HongYu
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Yang, J.J.
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Chen, J.D.
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Zhu, C.X.
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Du, A.Y.
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Loh, W.Y.
Journal article
2008, IEEE Electron Device Letters, (29) 1, p.50-53
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Wang, X.P.
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Lim, A.E.J.
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Yu, HongYu
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Li, M.F.
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Ren, C.
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Loh, W.Y.
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Zhu, C.X
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Chin, A.
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Trigg, A.D.
Journal article
2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877