Browsing by Author "Locquet, Jean-Pierre"
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Publication Abrupt Ge-Si and GeSn-Si interfaces by solid phase crystallization
Oral presentation2012, 43rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Carrier and heat transport properties of polycrystalline GeSn films on SiO2
Journal article2015, Applied Physics Letters, (107) 23, p.232105Publication Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2/O3 Films
Publication Efficient Direct Band-Gap Transition in Germanium by Three-Dimensional Strain
Journal article2021, ACS APPLIED MATERIALS & INTERFACES, (13) 26, p.30941-30949Publication Electrodeposition of lithium from lithium-containing ionic liquids
Publication Hole-doping induced ferromagnetism in 2D materials
Publication Implantation and activation of phosphorus in amorphous and crystalline Ge on Si
Oral presentation2012, E-MRS Spring Meeting Symposium M : More than Moore: Novel materials approaches for functionalized Silicon based MicroelectronicsPublication Implantation and activation of phosphorus in amorphous and crystalline germanium layers
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 9, p.P346-P350Publication In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
Publication In situ studies of Al2O3 ALD growth and self-cleaning on III-V surfaces by STM and XPS
Publication In-situ studies of the chemistry of trimethyl-aluminum on III-V semiconductor surfaces
Meeting abstract2012, 39th Conference on the Physics and Chemistry of Surfaces and Interfaces - PCSI, 22/01/2012Publication Indium rich III-nitrides on Germanium by molecular beam epitaxy
Proceedings paper2011, Compound Semiconductors for Energy Applications and Environmental Sustainability, 25/04/2011, p.1324-d01-03Publication Interface chemistry of Al2O3/III-V upon atomic layer deposition
Oral presentation2012, E-MRS Spring Meeting Symposium M: More than MoorePublication Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate
Publication Molecular beam epitaxy for advanced gate stack materials and processes
Publication MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication Origin of supertetragonality in BaTiO3
Journal article2022, PHYSICAL REVIEW MATERIALS, (6) 6, p.64410Publication Photoluminescence of bulk germanium
Oral presentation2012, MRS Spring Meeting Symposium L: Group IV Photonics for Sensing and ImagingPublication Photoluminescence of bulk germanium
Journal article2012-07, Physical Review B, (86) 3, p.35204Publication Raman spectroscopy and phonon dynamics in strained V2O3