Browsing by Author "Mantl, Siegfried"
- Results Per Page
- Sort Options
Publication Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
;Morschbacher, Mario ;da Silva, Douglas ;Fichtner, Paulo ;Zawislak, FernandoHollaender, BerndOral presentation2004, MRS Spring meeting Symposium B: High-Mobility Group-IV Materials and DevicesPublication Fabrication, characterization and analysis of Ge/GeSn heterojunction p-type tunnel transistors
;Schulte-Braucks, Christian ;Pandey, Rahul ;Sajjad, Redwan Noor ;Barth, MikeGhosh, Ram KrishnaJournal article2017-09, IEEE Transactions on Electron Devices, (64) 10, p.4354-4362Publication Fabrication, doping and characterization of strained silicon on SiO2 by ion beam techniques
Oral presentation2008, 16th International Conference on Ion Beam Modifications of MaterialsPublication Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
Meeting abstract2010, 17th International Conference on Ion Beam Modification of Materials - IBMM, 22/08/2010Publication Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs for low voltage logic
;Pandey, R ;Schulte-Braucks, Christian ;Sajjad, R.N. ;Barth, M. ;Ghosh, R ;Grisafe, B.Sharma, P.Proceedings paper2016-12, IEEE International Electron Devices Meeting - IEDM, 3/12/2016, p.520-523Publication Strain relaxation of SiGe/Si by He implantation: controlling dislocation sources at He precipitates
;Huging, Norbert ;Luysberg, Martina ;Urban, Knut ;Buca, Dan ;Hollander, BerndMantl, SiegfriedProceedings paper2005, Nanoelectronic Days 2005, 9/02/2005Publication Strain relaxation of SiGe/Si heterostructures by helium ionimplantation and subsequent annealing : Helium precipitates acting as dislocation sources
;Hueging, Norbert ;Luysberg, Martina ;Urban, Knut ;Buca, Dan ;Hollaender, BerndMantl, SiegfriedProceedings paper2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.97-102Publication Strained silicon on relaxed SiGe made by strain transfer
;Mantl, Siegfried ;Buca, Dan M. ;Holländer, Bernd ;Trinkaus, Helmut ;Luysberg, MartinaHouben, L.Meeting abstract2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.111-112Publication The role of internal dislocation sources for the strain ralaxation of pseudomorphic SiGe/Si structures
;Luysberg, Martina ;Hueging, Norbert ;Lenk, Steffi ;Buca, DanHollaender, BerndOral presentation2004, MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices