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Browsing by Author "Masahara, Meishoku"

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    Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope

    Masahara, Meishoku
    ;
    Surdeanu, Radu
    ;
    Witters, Liesbeth  
    ;
    Doornbos, Gerben  
    ;
    Nguyen Hoang, Viet
    Journal article
    2007-03, IEEE Electron Device Letters, (28) 3, p.217-219
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    Experimental investigation of optimum gate workfunction for CMOS four-terminal muligate MOSFETs (MUGFETs)

    Masahara, Meishoku
    ;
    Surdeanu, Radu
    ;
    Witters, Liesbeth  
    ;
    Doornbos, Gerben  
    ;
    Nguyen Hoang, Viet
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 6, p.1431-1437
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    Four-terminal FinFET device technology

    Masahara, Meishoku
    ;
    Endo, K.
    ;
    Liu, Y.X.
    ;
    O'uchi, S.
    ;
    Matsukawa, T.
    ;
    Surdeanu, Radu
    Proceedings paper
    2007, IEEE International Conference on Integrated Circuit Design and Technology - ICICDT, 30/05/2007, p.55-58
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    Independent double-gate FinFets with asymmetric gate stacks

    Masahara, Meishoku
    ;
    Surdeanu, Radu
    ;
    Witters, Liesbeth  
    ;
    Doornbos, Gerben  
    ;
    Nguyen Hoang, Viet
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.2097-2100

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