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Browsing by Author "Masin, F."

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    Publication

    Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

    Modolo, N.
    ;
    Fregolent, M.
    ;
    Masin, F.
    ;
    Benato, A.
    ;
    Bettini, A.
    ;
    Buffolo, M.
    ;
    De Santi, C.
    ;
    Borga, Matteo  
    Journal article
    2022, MICROELECTRONICS RELIABILITY, (138) November, p.Art. 120560B
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    ESD-failure of E-mode GaN HEMTs: role of device geometry and charge trapping

    Canato, E
    ;
    Meneghini, M.
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    Nardo, A.
    ;
    Masin, F.
    ;
    Barbato, F.
    ;
    Barbato, M.
    ;
    Stockman, Arno  
    ;
    Banerjee, A.
    Journal article
    2019, Microelectronics Reliability, 100, p.113334
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    μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

    Canato, E.
    ;
    Masin, F.
    ;
    Borga, M.
    ;
    Zanoni, E.
    ;
    Meneghini, M.
    ;
    Meneghesso, G.
    ;
    Stockman, Arno  
    Proceedings paper
    2019, 2019 IEEE International Reliability Physics Symposium (IRPS), 31/03/2019

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