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Browsing by Author "Muller, Matthias"

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    ALD on high mobility channels: engineering the proper gate stack passivation

    Sioncke, Sonja
    ;
    Lin, Hang Chun
    ;
    Adelmann, Christoph  
    ;
    Brammertz, Guy  
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    Delabie, Annelies  
    Proceedings paper
    2010, Atomic Layer Deposition Applications 6, 10/10/2010, p.9-23
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    Atomic layer deposition of Al2O3 on S-passivated Ge

    Sioncke, Sonja
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    Ceuppens, Joris  
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    Lin, Dennis  
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    Nyns, Laura  
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    Delabie, Annelies  
    ;
    Struyf, Herbert  
    Journal article
    2011, Microelectronic Engineering, (88) 7, p.1553-1556
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    Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium

    Sioncke, Sonja
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    Lin, Dennis  
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    Nyns, Laura  
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    Brammertz, Guy  
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    Delabie, Annelies  
    ;
    Conard, Thierry  
    Journal article
    2011, Journal of the Electrochemical Society, (158) 7, p.H687-H692
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    S-passivation of the Ge gate stack using (NH4)2S

    Sioncke, Sonja
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    Fleischmann, Claudia  
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    Lin, Dennis  
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    Vrancken, Evi  
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    Caymax, Matty  
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    Meuris, Marc  
    Meeting abstract
    2010, 10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS, 20/09/2010, p.7.4
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    S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

    Sioncke, Sonja
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    Lin, Dennis  
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    Nyns, Laura  
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    Brammertz, Guy  
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    Delabie, Annelies  
    ;
    Conard, Thierry  
    Journal article
    2011, Journal of Applied Physics, (110) 8, p.84907
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    Self-affine surface roughness of chemically and thermally cleaned Ge surfaces

    Fleischmann, Claudia  
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    Houssa, Michel  
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    Sioncke, Sonja
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    Beckhoff, Burkhard
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    Muller, Matthias
    Journal article
    2011, Journal of the Electrochemical Society, (158) 10, p.H1090-H1096
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    Towards passivation of Ge(100) surfaces by sulfur adsorption from (NH4)2S solution: a combined NEXAFS, STM and LEED study

    Fleischmann, Claudia  
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    Sioncke, Sonja
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    Couet, S.
    ;
    Schouteden, K.
    ;
    Beckhoff, Burkhard
    Journal article
    2011, Journal of the Electrochemical Society, (158) 5, p.H589-H594

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