Browsing by Author "Murota, Junichi"
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Publication Adsorption and desorption of hydrogen on Si(100) in H2 or Ar heat treatment
Meeting abstract2010, 5th International Workshop on New Group IV Semiconductor Nanoelectronics, 29/01/2010, p.25-26Publication Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth
Proceedings paper2017-05, ULSIC vs TFT: 6th Int Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, 21/05/2017, p.33-42Publication Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth
Journal article2018-05, ECS Journal of Solid State Science and Technology, (7) 6, p.P305-P310Publication Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth
Meeting abstract2017-05, ULSIC vs TFT: 6th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film T, 21/05/2017Publication Atomically controlled processing for Ge CVD epitaxial growth
Proceedings paper2016, IEEE 13th International Conference on Solid-State and Integrated-Circuit Technology - ICSICT, 25/10/2016, p.317-320Publication Atomically controlled processing for in-situ doping in CVD Si and Ge epitaxial growth
Meeting abstract2017-07, 1st International Semiconductor Conference for Global Challenges - ISCGC, 16/07/2017Publication Atomically controlled processing for Si and Ge CVD epitaxial growth
Meeting abstract2016, 229th ECS Meeting: Symposium D01: Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing, 29/05/2016, p.988Publication Atomically controlled processing for Si and Ge CVD epitaxial growth
Proceedings paper2016, Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing, 29/05/2016, p.71-82Publication Change Of H-termination on wet cleaned Si9100) and Ge(100) by heat treatment In H2 or Ar
Meeting abstract2008, 4th International SiGe Technology And Device Meeting, 11/05/2008, p.231-232Publication Dopant segregation and diffusion in CVD epitaxial Grown Ge
Publication Dopant segregation and diffusion in CVD epitaxial grown germanium
Publication Dopant segregation in Si and Ge CVD epitaxial growth
Meeting abstract2016, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.7-8Publication Dopant segregation in Si and Ge CVD epitaxial growth
Meeting abstract2016-11, 8th International Workshop on Advanced Materials Science and Nanotechnology - IWAMSN, 8/11/2016, p.33-34Publication EI4GroupIV: Excellence initiative for new group IV semiconductor materials & processing
Oral presentation2016, INC Global Nanotechnology ConferencePublication EI4GroupIV: Excellence Initiative for New Group IV semiconductor materials & processing
Meeting abstract2016, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.58-59Publication Evolution of the hydrogen terminated structure of the Si(100) surface and its interaction with H2 at 20 - 800°C
Proceedings paper2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Photoluminescence of phosphorus atomic layer doped Ge grown on Si