Browsing by Author "Nakashima, Toshiyuki"

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Improvement of the crystalline quality of β-Ga2O3 films by high-temperature annealing

Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

XRD investigation of the crystalline quality of Sn-doped β-Ga2O3 films deposited by the RF magnetron sputtering method