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Browsing by Author "Nguyen, Ngoc Duy"

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    Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x

    Shimura, Yosuke
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    Wang, Wei
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    Nieddu, Thomas
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    Gencarelli, Federica
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    Vincent, Benjamin  
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    Laha, Priya
    Proceedings paper
    2013-06, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.65-66
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    Current transients in reverse-biased p-GeSn/n-Ge diodes

    Baert, Bruno
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    Gupta, Somya
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    Gencarelli, Federica
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    Shimura, Yosuke
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    Loo, Roger  
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    Simoen, Eddy  
    Proceedings paper
    2015, International Conference on Silicon Epitaxy and Heterostructures - ICSI-9, 17/05/2015, p.111-112
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    Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers

    Gupta, Somya
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    Simoen, Eddy  
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    Asano, Takanori
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    Nakatsuka, Osamu
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    Gencarelli, Federica
    Proceedings paper
    2013, 8th International Conference on Silicon Epitaxy and Heterostructures - ICSI-8, 2/06/2013, p.63-64
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    Grain-boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties (vol 11, 7788, 2021)

    Resende, Joao
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    Nguyen, Van-Son
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    Fleischmann, Claudia  
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    Bottiglieri, Lorenzo
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    Brochen, Stephane
    Journal article correction
    2021
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    Integration of III-V on Si for high-mobility CMOS

    Waldron, Niamh  
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    Wang, G.
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    Nguyen, Ngoc Duy
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    Orzali, Tommaso
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    Merckling, Clement  
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    Brammertz, Guy  
    Proceedings paper
    2012, International Silicon-Germanium Technology and Device Meeting - ISTDM, 4/06/2012
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    Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique

    Waldron, Niamh  
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    Wang, Gang
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    Nguyen, Ngoc Duy
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    Orzali, Tommaso
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    Merckling, Clement  
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    Brammertz, Guy  
    Proceedings paper
    2012, Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4, 6/05/2012, p.115-128
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    Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X = Sn, Ge, Si) kesterites

    Ratz, Thomas
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    Raty, Jean-Yves
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    Brammertz, Guy  
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    Vermang, Bart  
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    Nguyen, Ngoc Duy
    Journal article
    2021, JOURNAL OF PHYSICS-ENERGY, (3) 3, p.035005
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    Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

    Baert, Bruno
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    Gupta, Somya
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    Schmeits, Marcel
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    Simoen, Eddy  
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    Nguyen, Ngoc Duy
    Proceedings paper
    2013, 8th International conference on Silicon Epitaxy and Heterostructures - ICSI-8, 3/06/2013
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    Theoretical and experimental investigation of the GeSn bandgap

    Shimura, Yosuke
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    Wang, Wei
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    Gencarelli, Federica
    ;
    Vincent, Benjamin  
    ;
    Nieddu, Thomas
    ;
    Laha, Priya
    Meeting abstract
    2013, E-MRS 2013 Fall Meeting, 16/09/2013

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