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Browsing by Author "Nishi, Yoshio"

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    Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations

    Liang, Zhao
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    Clima, Sergiu  
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    Magyari-Köpe, Blanka
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    Jurczak, Gosia  
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    Nishi, Yoshio
    Journal article
    2015, Applied Physics Letters, (107) 1, p.13504
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    Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

    Kobabyashi, Masaharu
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    Mitard, Jerome  
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    Irisawa, Toshihumi
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    Hoffmann, Thomas Y.
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    Meuris, Marc  
    Proceedings paper
    2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.215-216
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    On the high-field transport and uniaxial stress effect in Ge PFETs

    Kobayashi, Masaharu
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    Mitard, Jerome  
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    Irisawa, Toshifumi
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    Hoffmann, Thomas Y.
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    Meuris, Marc  
    Journal article
    2011, IEEE Transactions on Electron Devices, (58) 2, p.384-391
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    The effects of VUV radiation on low-k organosilicate glass (SiCOH) as measured with electron-spin resonance

    Xue, Panpan
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    Zheng, Huifeng
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    Li, Weiyi
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    de Marneffe, Jean-Francois  
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    Baklanov, Mikhaïl
    Meeting abstract
    2015, AVS 62nd International Symposium and Exhibition, 18/10/2015, p.177
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    Theory and experiments of the impact of work function variability on threshold voltage variability in MOS devices

    Zhang, Xiao
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    Mitard, Jerome  
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    Ragnarsson, Lars-Ake  
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    Hoffmann, Thomas Y.
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    Deal, Michael
    Journal article
    2012, IEEE Transactions on Electron Devices, (59) 11, p.3124-3126

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