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Browsing by Author "Niwa, M."

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    45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

    Mitsuhashi, Riichirou
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    Yamamoto, Kazuhiko
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    Hayashi, S.
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    Rothschild, Aude
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    Kubicek, Stefan  
    Journal article
    2005, Microelectronic Engineering, 80, p.7-10
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    Implementation of high-k gate dielectrics - a status update

    De Gendt, Stefan  
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    Chen, Jerry
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    Carter, Richard
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    Cartier, Eduard
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    Caymax, Matty  
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    Claes, Martine  
    Proceedings paper
    2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14
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    Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

    Yu, HongYu
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    Chang, Shou-Zen
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    Veloso, Anabela  
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    Lauwers, Anne  
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    Adelmann, Christoph  
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    Onsia, Bart  
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.18-19
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    Scaling of HF-based gate dielectrics - intgeration with polysilicon gates

    De Gendt, Stefan  
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    Caymax, Matty  
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    Chen, J.
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    Claes, Martine  
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    Conard, Thierry  
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    Delabie, Annelies  
    Proceedings paper
    2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.267-275
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    Study of dopant diffusion and defect evolution for advanced ultra shallow junctions based on atomistic kinetic monte carlo approach

    Noda, T.
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    Vandervorst, Wilfried  
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    Felch, S.
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    Parihar, V.
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    Vrancken, Christa  
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    Severi, Simone  
    Proceedings paper
    2007, Extended Abstracts of the International Conference on Solid State Devices and Materials - SSDM, 18/09/2007, p.712-713

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