Browsing by Author "Noori, A."
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Publication Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
; ; ; Proceedings paper2012-09, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012Publication Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
; ; ; Journal article2013, Japanese Journal of Applied Physics, (52) 4, p.04CA02Publication Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.861-864Publication Integration of 50 nm half pitch single damascene copper trenches in BDII by means of double patterning 193 nm immersion lithography on metal hardmask
Oral presentation2007, Advanced Metallization Conference - AMC