Browsing by Author "Ogier, Jean-Luc"
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Publication A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Journal article1998, IEEE Trans. Electron Devices, (45) 2, p.472-481Publication A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides
Proceedings paper1996, International Electron Devices Meeting. Technical Digest - IEDM, 8/12/1996, p.327-330Publication A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
Journal article1996, Microelectronics and Reliability, 36, p.1651-1654Publication Analysis of the early-failure rate prediction of time-dependent dielectric breakdown in thin oxides
Proceedings paper1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.299-302Publication New insights in the impact of the breakdown mechanisms on the statistics of intrinsic and extrinsic breakdown in thin oxides
Oral presentation1996, 27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.Publication New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
Journal article1998, IEEE Trans. Electron Devices, (45) 4, p.904-911Publication On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown
Proceedings paper1996, International Reliability Physics Symposium - IRPS, 29/04/1996, p.44-54Publication On the polarity dependence of oxide breakdown in MOS-devices with n+ and p+ polysilicon gate
Proceedings paper1996, Proceedings of the 26th European Solid-State Device Research Conference - ESSDERC, 9/09/1996, p.763-766