Browsing by Author "Olsen, S.H."
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Publication 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Journal article2009, Solid-State Electronics, (53) 11, p.1177-1182Publication Quantifying self-heating effects with scaling in globally strained Si MOSFETS
Journal article2007, Solid-State Electronics, (51) 11_12, p.1473-1478Publication Strained Si/SiGe MOS technology: improving gate dielectric integrity
;Olsen, S.H. ;Yan, L. ;Agaiby, R. ;Escobedo-Cousin, A.G. ;O'Neil, A.G. ;Hellstrom, P.E.Ostling, M.Journal article2009, Microelectronic Engineering, (86) 3, p.218-223Publication Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers
;Escobedo-Cousin, E. ;Olsen, S.H. ;Dobrosz, P. ;Bull, S.J. ;O'Neill, A.G. ;Coulson, H.Claeys, CorJournal article2007, Journal of Applied Physics, (102) 12, p.123502