Browsing by Author "Pétry, Jasmine"
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Publication Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Journal article2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87Publication Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Oral presentation2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.Publication Gate dielectrics for high performance and low power CMOS SoC applications
;Cubaynes, Florence ;Dachs, Charles ;Detcheverry, Celine ;Zegers, A.Venezia, VincentProceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.427-430Publication Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Oral presentation2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference onPublication Physical characterization of high-k gate stacks deposited on HF-last surfaces
Proceedings paper2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92Publication Thermal stability and scalability of zr-aluminate-based high-k gate stacks
;Chen, Jerry ;Cartier, Eduard ;Carter, Richard ;Kauerauf, Thomas ;Zhao, ChaoPétry, JasmineProceedings paper2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.192-193Publication TOFSIMS as a monitor for thin film growth
Oral presentation2001, 13th International Conference on Secondary Ion Mass Spectrometry - SIMS 13; 11-16 November 2001; Nara, Japan.