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Browsing by Author "Pétry, Jasmine"

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    Characterisation of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    Nohira, Hiroshi
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    Tsai, Wilman
    ;
    Besling, Wim
    ;
    Young, Edward
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    Pétry, Jasmine
    ;
    Conard, Thierry  
    Journal article
    2002, Journal of Non-Crystalline Solids, (303) 1, p.83-87
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    Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

    Nohira, Hiroshi
    ;
    Tsai, Wilman
    ;
    Besling, Wim
    ;
    Young, Edward
    ;
    Pétry, Jasmine
    ;
    Conard, Thierry  
    Oral presentation
    2001, Symposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
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    Gate dielectrics for high performance and low power CMOS SoC applications

    Cubaynes, Florence
    ;
    Dachs, Charles
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    Detcheverry, Celine
    ;
    Zegers, A.
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    Venezia, Vincent
    Proceedings paper
    2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.427-430
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    Interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

    Tsai, Wilman
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    Nohira, Hiroshi
    ;
    Carter, Richard
    ;
    Caymax, Matty  
    ;
    Conard, Thierry  
    ;
    De Gendt, Stefan  
    Oral presentation
    2001, IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on
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    Physical characterization of high-k gate stacks deposited on HF-last surfaces

    Bender, Hugo  
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    Conard, Thierry  
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    Nohira, Hiroshi
    ;
    Pétry, Jasmine
    ;
    Richard, Olivier  
    ;
    Zhao, Chao
    Proceedings paper
    2001, Ectended Abstracts of the International Workshop on Gate Insulator. IWGI 2001, 1/11/2001, p.86-92
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    Thermal stability and scalability of zr-aluminate-based high-k gate stacks

    Chen, Jerry
    ;
    Cartier, Eduard
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    Carter, Richard
    ;
    Kauerauf, Thomas
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    Zhao, Chao
    ;
    Pétry, Jasmine
    Proceedings paper
    2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.192-193
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    TOFSIMS as a monitor for thin film growth

    Conard, Thierry  
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    Vandervorst, Wilfried  
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    Pétry, Jasmine
    ;
    Zhao, Chao
    ;
    Besling, Wim
    ;
    Nohira, Hiroshi
    Oral presentation
    2001, 13th International Conference on Secondary Ion Mass Spectrometry - SIMS 13; 11-16 November 2001; Nara, Japan.

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