Browsing by Author "Pobegen, Gregor"
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Publication Border trap based modeling of SiC transistor transfer characteristics
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5Publication Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Publication Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Proceedings paper2020, IEEE International Integrated Reliability Workshop (IIRW), OCT 04-NOV 01, 2020, p.31-34Publication Physical modeling of bias temperature instabilities in SiC MOSFETs
Publication TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Journal article2022-04-19, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 6, p.3290-3295Publication The "permanent" component of NBTI: composition and annealing