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Browsing by Author "Poliakov, Pavel"

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    Bridging lithography processes with NAND flash ECC complexity

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Vaglio Pret, Alessandro  
    ;
    Miranda Corbalan, Miguel
    Proceedings paper
    2011-06, 3rd International Memory Workshop - IMW, 22/05/2011, p.161-164
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    Circuit design for bas compatibility in novel FinFET-based floating body RAM

    Poliakov, Pavel
    ;
    Anchlia, Ankur
    ;
    Garcia Bardon, Marie  
    ;
    Rooseleer, Bram  
    ;
    De Wachter, Bart  
    Journal article
    2010, IEEE Transactions on Circuits and Systems II: Express Briefs, (57) 3, p.183-187
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    Circuit design for bias compatibility investigation of bulk FinFET based floating body RAM

    Anchlia, Ankur
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    Garcia Bardon, Marie  
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    Poliakov, Pavel
    ;
    Rooseleer, Bram  
    ;
    De Wachter, Bart  
    Proceedings paper
    2009, IEEE Workshop on Memory Technology, Design and Testing, 31/08/2009
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    Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Miranda Corbalan, Miguel
    ;
    Van Houdt, Jan  
    ;
    Dehaene, Wim  
    Journal article
    2011-05, Microelectronics Reliability, (51) 5, p.919-924
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    Impact of EUV lithography line edge roughness on 16 nm memory generation

    Vaglio Pret, Alessandro  
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    Poliakov, Pavel
    ;
    Bianchi, Davide
    ;
    Gronheid, Roel  
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    Blomme, Pieter  
    Oral presentation
    2011, 55th International conference on Electron, Ion and Photon Beam Technology and Nanofabrication - EIPBN
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    Impact of line edge roughness on cell-to-cell coupling variability in NAND flash arrays

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Miranda Corbalan, Miguel
    ;
    Anchlia, Ankur
    ;
    Dobrovolny, Petr  
    Proceedings paper
    2010-03, 11th International Conference on Ultimate Integration on Silicon - ULIS, 17/02/2010, p.41-44
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    Induced variability of cell-to-cell interference by line edge roughness in nand flash arrays

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Vaglio Pret, Alessandro  
    ;
    Miranda Corbalan, Miguel
    Journal article
    2012, IEEE Electron Device Letters, (33) 2, p.164-166
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    Linking EUV lithography line edge roughness and 16 nm NAND memory performance

    Vaglio Pret, Alessandro  
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    Poliakov, Pavel
    ;
    Gronheid, Roel  
    ;
    Blomme, Pieter  
    Journal article
    2012, Microelectronic Engineering, (98) 10, p.24-28
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    Modeling and exploration of novel non-volatile memory technologies

    Poliakov, Pavel
    PHD thesis
    2012-09
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    Roughness analysis for (EUV) optical lithography

    Vaglio Pret, Alessandro  
    ;
    Poliakov, Pavel
    ;
    Bianche, Davide
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    Gronheid, Roel  
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    Blomme, Pieter  
    Oral presentation
    2010, PRODI Workshop
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    Spacer-defined EUV lithography reducing variability of 12nm NAND Flash memories

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Vaglio Pret, Alessandro  
    ;
    Miranda Corbalan, Miguel
    Proceedings paper
    2012, 4th IEEE International Memory Workshop - IMW, 20/06/2012, p.33-36
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    Trades-off between line edge roughness and error-correcting codes requirements for NAND Flash Memories

    Poliakov, Pavel
    ;
    Blomme, Pieter  
    ;
    Vaglio Pret, Alessandro  
    ;
    Miranda Corbalan, Miguel
    Journal article
    2012, Microelectronics Reliability, (52) 3, p.525-529
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    Variability aware modeling of SoCs: from device variations to manufactured system yield

    Miranda Corbalan, Miguel
    ;
    Dierickx, Bart
    ;
    Zuber, Paul  
    ;
    Dobrovolny, Petr  
    ;
    Kutscherauer, Florian
    Proceedings paper
    2009, International Symposium on Quality Electronic Design, 16/03/2009

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