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Browsing by Author "Priesol, Juraj"

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    3-D device electrothermal simulation for analysis of multifinger power HEMTs

    Chvála, Aleš
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    Marek, Juraj
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    Satka, Alexander
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    Priesol, Juraj
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    Príbytnŭ, Patrik
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    Donoval, Daniel
    Proceedings paper
    2018, GaN Marathon 2.0, 18/04/2018, p.44-45
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    Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

    Priesol, Juraj
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    Satka, Alexander
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    Visalli, Domenica
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    Derluyn, Joff
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    Zhao, Ming  
    ;
    Stoffels, Steve  
    Proceedings paper
    2017, 5th International Conference on Advances in Electronic and Photonic Technologies, 19/06/2017, p.263-266
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    Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

    Priesol, Juraj
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    Satka, Alexander
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    Visalli, Domenica
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    Zhao, Ming  
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    Stoffels, Steve  
    Oral presentation
    2017, 5th international conference on Advances in Electronic and Photonic Technologies
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    Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

    Priesol, Juraj
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    Satka, Alexander
    ;
    Chvala, A.
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    Stoffels, Steve  
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    Decoutere, Stefaan  
    Proceedings paper
    2017-05, 41st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 21/05/2017
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    Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

    Priesol, Juraj
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    Satka, Alexander
    ;
    Chvala, Ales
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    Stoffels, Steve  
    ;
    De Jaeger, Brice  
    Journal article
    2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 1, p.216-221
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    Investigation of semi-vertical GaN FET structures function using EBIC method

    Satka, Alexander
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    Priesol, Juraj
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    You, Shuzhen  
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    Geens, Karen  
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    Decoutere, Stefaan  
    Proceedings paper
    2020, The 11th Solid State Surfaces and Interfaces (SSSI 2020), 23/11/2020, p.92-93
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    MOCVD growth and characterizations of unintentionally and intentionally C doped GaN on 200 mm Si (111)

    Zhao, Ming  
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    Priesol, Juraj
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    Satka, Alexander
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    Janicki, Lukasz
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    Baranowski, Michal
    Meeting abstract
    2016, 18th International Conference on Metal Organic Vapor Phase Epitaxy - MOVPE, 10/07/2016
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    Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

    Stoffels, Steve  
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    Posthuma, Niels  
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    Decoutere, Stefaan  
    ;
    Bakeroot, Benoit  
    Proceedings paper
    2019-04, IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.4D4.1-4D4.10

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