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Browsing by Author "Qu, Xin-Ping"

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    A study on (Co1-xNixSi2) Schottky contacts on N-Si(100) substrates

    Qu, Xin-Ping
    ;
    Detavernier, C.
    ;
    Van Meirhaeghe, R.L.
    ;
    Cardon, F.
    ;
    Lauwers, Anne  
    ;
    Maex, Karen  
    Proceedings paper
    2001, Semiconductor Technology - ISTC, p.540-548
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    Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma

    Xie, Qi  
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    Deduytsche, Davy
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    Schaekers, Marc  
    ;
    Caymax, Matty  
    ;
    Delabie, Annelies  
    ;
    Qu, Xin-Ping
    Journal article
    2011, Electrochemical and Solid-State Letters, (14) 5, p.G20-G22
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    Germanium surface passivation and atomic layer deposition of high- k dielectrics - a tutorial review on Ge-based MOS capacitors

    Xie, Qi  
    ;
    Deng, Shaoren  
    ;
    Schaekers, Marc  
    ;
    Lin, Dennis  
    ;
    Caymax, Matty  
    ;
    Delabie, Annelies  
    ;
    Qu, Xin-Ping
    Journal article
    2012, Semiconductor Science and Technology, (27) 7, p.74012
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    Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

    Xie, Qi  
    ;
    Deduytsche, Davy
    ;
    Schaekers, Marc  
    ;
    Caymax, Matty  
    ;
    Delabie, Annelies  
    ;
    Qu, Xin-Ping
    Journal article
    2010, Applied Physics Letters, (97) 11, p.112905
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    Nondestructive characterization of thin silicides using x-ray reflectivity

    Detavernier, C.
    ;
    De Gryse, R.
    ;
    Van Meirhaeghe, R. L.
    ;
    Cardon, F.
    ;
    Ru, Guo-Ping
    ;
    Qu, Xin-Ping
    Journal article
    2000, J. Vacuum Science and Technology A, (A18) 2, p.470-476
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    TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

    Xie, Qi  
    ;
    Musschoot, Jan
    ;
    Schaekers, Marc  
    ;
    Caymax, Matty  
    ;
    Delabie, Annelies  
    ;
    Lin, Dennis  
    Journal article
    2011, Electrochemical and Solid-State Letters, (14) 5, p.G27-G30

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