Browsing by Author "Robertson, J."
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Publication Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Journal article2012, IEEE Electron Device Letters, (33) 12, p.1681-1683Publication Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Publication Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing scheme
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.827-830Publication Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Journal article2014, IEEE Electron Device Letters, (35) 2, p.160-162Publication State of transition metal catalysts during carbon nanotube growth
Publication Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
; Journal article2013, Microelectronic Engineering, 109, p.43-45