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Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Publication:
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Date
2014
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ma, J.
;
Zhang, J.F.
;
Ji, Zhigang
;
Benbakhti, Brahim
;
Zhang, Wei Dong
;
Zheng, Xue Feng
;
Mitard, Jerome
;
Kaczer, Ben
;
Groeseneken, Guido
;
Hall, S.
;
Robertson, J.
;
Chalker, P.
Journal
IEEE Transactions on Electron Devices
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1937
since deposited on 2021-10-22
Acq. date: 2025-12-08
Citations
Metrics
Views
1937
since deposited on 2021-10-22
Acq. date: 2025-12-08
Citations