Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P.

Publication:

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Date

2014

Journal article

Simple item page Full metadata Statistics

Files

27504.pdf 3.53 MB

Author(s)

;

;

;

;

;

;

;

;

;

;

;

Journal

IEEE Transactions on Electron Devices

Statistics

1941 since deposited on 2021-10-22

Acq. date: 2026-02-26

Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack

Date

Files

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations